View TF21918B_340860.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TF219..B
TF219..B
Fast Switching Thyristor
Replaces March 1998 version, DS4271-2.3 DS4271-3.0 January 2000
APPLICATIONS
s High Power Inverters And Choppers s UPS s Railway Traction s Induction Heating s AC Motor Drives s Cycloconverters
KEY PARAMETERS VDRM 2000V IT(RMS) 190A ITSM 1200A dV/dt 200V/s dI/dt 500A/s tq 40s
FEATURES
s Double Side Cooling s High Surge Capability s High Voltage
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM 2000 1800 1600 1400 Conditions
TF219 20B TF219 18B TF219 16B TF219 14B
VRSM = VRRM + 100V IDRM = IRRM = 15mA at VRRM or VDRM & Tvj
Lower voltage grades available.
Outline type code: MU86. See Package Details for further information.
CURRENT RATINGS
Symbol IT(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half sinewave, 50Hz, Tcase = 80oC Half sinewave, 50Hz, Tcase = 80oC Max. 120 190 Units A A
1/13
TF219..B
SURGE RATINGS
Symbol ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; VR = 0% VRRM, Tj = 125C 10ms half sine; VR = 0% VRRM, Tj = 125C Max. 1.2 7.2 Units kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 3.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -40 3.3 125 150 3.6
o
Min. dc Anode dc -
Max. 0.1 0.19 0.24 0.02 0.04 125
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR
0.5x IRR
2/13
TF219..B
DYNAMIC CHARACTERISTICS
Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 150A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20 dI/dt Rate of rise of on-state current tr 0.5s, Tj = 125C VT(TO) rT tgd t(ON)TOT IH Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current At Tvj = 125oC At Tvj = 125oC Tj = 25C, IT = 100A, VD = 50V, IG = 1A, dI/dt = 50A/s, dIG/dt = 1A/s Tj = 25oC, ITM = 1A, VD = 12V Tj = 125C, IT = 100A, VR = 50V, tq code: B dV/dt = 200V/s (Linear to 60% VDRM), dIR/dt = 30A/s, Gate open circuit Non-repetitive 800 2.0 5.0 3* 1.5* 60 40 A/s V m s s mA s Repetitive 50Hz Min. Max. 2.75 15 200 500 Units V mA V/s A/s
tq
Turn-off time
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6 VDRM = 12V, Tcase = 25oC, RL = 6 At VDRM Tcase = 125oC, RL = 1k Typ. Max. 3.0 200 0.2 5.0 4 16 3 Units V mA V V A W W
3/13
TF219..B
CURVES
4/13
TF219..B
5/13
TF219..B
NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22F, R = 4.7
NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22F, R = 4.7
6/13
TF219..B
NOTES: 1. VD 600V. 2. VR 10V. 3. R.C Snubber, C = 0.22F, R = 4.7
NOTES: 1. dI/dt = 25A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
7/13
TF219..B
NOTES: 1. dI/dt = 25A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
NOTES: 1. dI/dt = 25A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
8/13
TF219..B
NOTES: 1. dI/dt = 50A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
NOTES: 1. dI/dt = 50A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
9/13
TF219..B
NOTES: 1. dI/dt = 50A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
NOTES: 1. dI/dt = 100A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
10/13
TF219..B
NOTES: 1. dI/dt = 100A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
NOTES: 1. dI/dt = 100A/s 2. VD 600V. 3. VR 10V. 4. R.C Snubber, C = 0.22F, R = 4.7
11/13
TF219..B
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes 3.6 x 2.0 deep (in both electrodes)
6.3
Cathode tab Cathode O 42 max O19nom
O1.5 Gate O19nom O 38 max
Anode
Nominal weight: 50g Clamping force: 3.5kN 10% Lead length: 250mm Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Gate triggering and the use of gate characteristics Recommendations for clamping power semiconductors The effect of temperature on thyristor performance Thyristor and diode measurement with a multi-meter Turn-on performance of thyristors in parallel Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4840 AN4839 AN4870 AN4853 AN4999 AN5001
12/13
15.0 14.0
TF219..B
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS4271-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
13/13

▲Up To Search▲

Price & Availability of TF21918B

	To Download TF21918B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .